New low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (pecvd)

ABSTRACT

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.11/021,319, filed Dec. 22, 2004, which is a continuation of U.S. patentapplication Ser. No. 10/247,404, filed Sep. 19, 2002, which applicationclaims benefit of U.S. Provisional Patent Application Ser. No.60/397,184, filed Jul. 19, 2002, and which application is acontinuation-in-part of U.S. patent application Ser. No. 10/196,498,filed Jul. 15, 2002, which claims benefit of U.S. Provisional PatentApplication Ser. No. 60/340,615, filed Dec. 14, 2001, all of which areherein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the present invention generally relate to the fabricationof integrated circuits. More specifically, embodiments of the presentinvention generally relate to processes for depositing barrier layers ona substrate and structures that include the barrier layers.

2. Description of the Related Art

Semiconductor device geometries have dramatically decreased in sizesince such devices were first introduced several decades ago. Sincethen, integrated circuits have generally followed the two year/half-sizerule (often called Moore's Law), which means that the number of devicesthat will fit on a chip doubles every two years. Today's fabricationplants are routinely producing devices having sub-quarter micron featuresizes, and tomorrow's plants soon will be producing devices having evensmaller geometries.

In order to further reduce the size of devices on integrated circuits,it has become necessary to use conductive materials having lowresistivity, such as copper, and insulators having low k (dielectricconstant <4.0) to reduce the capacitive coupling between adjacent metallines.

A barrier layer is typically deposited between subsequently depositedconductive materials and low k dielectric material to prevent diffusionof byproducts such as moisture onto the conductive materials. Forexample, moisture that can be generated during formation of a low kinsulator readily diffuses to the surface of the conductive metal andincreases the resistivity of the conductive metal surface.

A barrier layer can also be used to prevent diffusion of conductivematerials. Low k dielectric materials are often porous and susceptibleto interlayer diffusion of conductive materials, such as copper, whichcan result in the formation of short-circuits and device failure. Abarrier layer is typically used in copper damascene structures to reduceor prevent interlayer diffusion.

Attempts have been made to deposit silicon carbide barrier layers byplasma enhanced chemical vapor deposition. However, silicon carbidebarrier layers typically have had undesirable characteristics, such asunacceptable current leakage, and film instability, such as uponexposure to air. Silicon carbide layers doped with oxygen or nitrogenhave shown some improvements in the areas of current leakage,compressive stress, and film stability. However, the nitrogen innitrogen-doped silicon carbide layers can poison photoresist layersdeposited on a substrate. The gases used to incorporate oxygen inoxygen-doped silicon carbide layers can oxidize underlying metalfeatures on which the oxygen-doped silicon carbide layer is deposited.

Therefore, there remains a need for methods of depositing siliconcarbide and oxygen-doped silicon carbide barrier layers with goodchemical and mechanical properties.

SUMMARY OF THE INVENTION

Aspects of the invention generally provide methods for depositing asilicon carbide glue layer on a substrate, wherein the glue layer hasimproved current leakage without doping with oxygen or nitrogen. In oneaspect, the invention provides a method for processing a substrate,including reacting a gas mixture comprising a carbon andsilicon-containing compound and a member selected from the group ofhydrogen, argon, and an aliphatic hydrocarbon comprising a carbon-carbondouble bond or a carbon-carbon triple bond, such as ethylene, in aplasma and depositing a silicon carbide glue layer on the substrate. Thegas mixture may also include helium.

In another aspect of the invention, a method is provided for depositinga barrier bilayer on a substrate, including reacting a gas mixturecomprising an organosilicon compound, and a member selected from thegroup of hydrogen, argon, and an aliphatic hydrocarbon comprising acarbon-carbon double bond or a carbon-carbon triple bond, such asethylene, in a plasma and depositing a silicon carbide glue layer on thesubstrate, reacting a second gas mixture in a plasma, and depositing anoxygen-containing silicon carbide barrier layer on the silicon carbideglue layer. In one embodiment, the oxygen-containing silicon carbidebarrier layer may be deposited from a gas mixture comprising anorganosilicon compound and an oxygen-containing gas having the formulaC_(X)H_(Y)O_(Z), with X being from 0 to 2, Y being from 0 to 2, and Zbeing from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less. Inanother embodiment, the oxygen-containing silicon carbide barrier layermay be deposited from a second gas mixture comprising an organosiliconcompound and an oxygen-containing compound having the general formula

Optionally, the substrate may be pre-treated with a hydrogen plasmabefore the silicon carbide glue layer is deposited.

In another aspect of the invention, a method is provided for depositinga barrier bilayer on a substrate, including depositing a SiN or SiCNlayer on the substrate, reacting a gas mixture in a plasma, anddepositing an oxygen-containing silicon carbide barrier layer on the SiNor SiCN layer. The oxygen-containing silicon carbide barrier layer maybe used as a cap layer on a SiN or SiCN layer. The oxygen-containingsilicon carbide barrier layer may be deposited from a gas mixturecomprising an organosilicon compound and an oxygen-containing gas havingthe formula C_(X)H_(Y)O_(Z), with X being from 0 to 2, Y being from 0 to2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 orless. Optionally, the substrate may be pre-treated with a hydrogenplasma before the silicon carbide glue layer is deposited.

In yet another aspect, a method is provided for depositing a siliconcarbide hard mask on a substrate, including reacting a gas mixturecomprising an organosilicon compound and a member selected from thegroup of hydrogen, argon, and an aliphatic hydrocarbon comprising acarbon-carbon double bond or a carbon-carbon triple bond, such asethylene, in a plasma and optionally depositing a second hard mask onthe silicon carbide hard mask.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a cross-sectional view of a Producer® chamber.

FIG. 2 is a cross-sectional view showing a device of an embodiment ofthe invention comprising a silicon carbide glue layer.

FIG. 3 is a cross-sectional view showing a device of an embodiment ofthe invention comprising a silicon carbide hard mask.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Silicon Carbide Glue Layers

Aspects of the invention provide methods for depositing an oxygen-dopedsilicon carbide layer on a substrate. The oxygen-doped silicon carbidelayer may be a layer that is underneath or below a photoresist layer ona substrate. The oxygen-doped silicon carbide layer may be a layer thatis deposited on a silicon carbide glue layer, a SiN layer, or a SiCNlayer.

Aspects of the invention provide methods for depositing a siliconcarbide glue layer or a silicon carbide hard mask on a substrate. Asdefined herein, a “silicon carbide glue layer” or a “silicon carbidehard mask” is a silicon carbide layer having reduced current leakage incomparison to conventional silicon carbide layers that do not containoxygen or nitrogen. The silicon carbide layers described herein havesignificant and unexpected improvements in current leakage.

The silicon carbide glue layer may serve as a complete barrier layeritself, or the silicon carbide glue layer may be part of a barrierbilayer that includes a barrier layer in addition to the silicon carbideglue layer. The silicon carbide glue layer may be deposited on thesubstrate from a gas mixture comprising an organosilicon compound. Theorganosilicon compound may have the formulaSiH_(a)(CH₃)_(b)(C₂H₅)_(c)(C₆H₅)_(d), wherein a is 0 to 2, b is 0 to 4,c is 0 to 4, and d is 0 to 4. Alternatively, the organosilicon compoundmay have the general formula

Alternatively, the organosilicon compound may have the general formula

Preferably, the gas mixture does not include oxygen, nitrogen, orcompounds with silicon-silicon bonds. Preferably, the gas mixturecomprises trimethylsilane (TMS). The silicon carbide glue layer may bedeposited on a surface of the substrate comprising part of a dielectriclayer and part of a metal line disposed in the dielectric layer. Thesilicon carbide glue layers described herein are typically low k (k<4)layers.

In any of the embodiments or aspects described herein, the organosiliconcompound used in the gas mixture to deposit the silicon carbide gluelayer can be dimethylsilane, trimethylsilane, diethylsilane,diethylmethylsilane, disilanomethane, bis(methylsilano)methane,1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane,1,3,5-trisilano-2,4,6-trimethylene, diphenylsilane,dimethylphenylsilane, diphenylmethylsilane, phenylmethylsilane, orcombinations thereof.

In any of the embodiments or aspects described herein, a substrate uponwhich a silicon carbide glue layer described herein is deposited may bepre-treated with a hydrogen plasma. The pre-treatment with a hydrogenplasma may remove metal oxides, such as copper oxide, from the substratesurface. It was found that substrates including copper and pre-treatedwith a hydrogen plasma had a higher reflectivity than substratesincluding copper and pre-treated with an ammonia plasma. It is believedthat the improved reflectivity is a result of removal of copper oxidefrom the substrate. The pre-treatment may be performed in the samechamber in which the silicon carbide glue layer is deposited. Hydrogengas may be flowed into the chamber at a flow rate between about 300 sccmand about 1000 sccm. The substrate temperature may be between about 200°C. and about 400° C. The hydrogen gas may be reacted in the chamber at apressure of between about 3 Torr and about 7 Torr. A RF power of betweenabout 100 watts and about 600 watts may be applied in the chamber. Thespacing between the gas distributor in the chamber and the substrate maybe between about 200 mils and about 600 mils.

Methods of forming the silicon carbide glue layers described herein arepreferably performed in a processing chamber adapted to depositorganosilicon material while applying RF power. For example, a Producer®chemical vapor deposition chamber, commercially available from AppliedMaterials, Inc., of Santa Clara, Calif. may be used. An example of aProducer® Chamber is described in U.S. Pat. No. 5,855,681, which isincorporated by reference herein. A brief description of a Producer®Chamber will be given with respect to FIG. 1.

FIG. 1 shows a cross sectional view of a chamber 100. The chamber 100has processing regions 618 and 620. A heater pedestal 628 is movablydisposed in each processing region 618, 620 by a stem 626 which extendsthrough the bottom of the chamber body 612 where it is connected to adrive system 603. Each of the processing regions 618, 620 alsopreferably include a gas distribution assembly 608 disposed through thechamber lid 604 to deliver gases into the processing regions 618, 620.The gas distribution assembly 608 of each processing region alsoincludes a gas inlet passage 640 which delivers gas into a shower headassembly 642.

The flow rates described herein for introducing gases into a plasmaprocessing chamber are given with respect to the total processing areain a Producer chamber, i.e., both processing regions. Thus, the flowrates into each processing region of the Producer chamber areapproximately half of the flow rates described herein.

In one aspect, a silicon carbide glue layer may be deposited on asubstrate by reacting a gas mixture comprising an organosiliconcompound, and an aliphatic hydrocarbon comprising a carbon-carbon doublebond or a carbon-carbon triple bond, such as ethylene, and optionally,helium, in a plasma provided in a plasma processing chamber. Preferably,the organosilicon compound is trimethylsilane, and the aliphatichydrocarbon comprising a carbon-carbon double bond or a carbon-carbontriple bond is ethylene (C₂H₄). A silicon carbide glue layer may bedeposited in one embodiment by introducing into a plasma processingchamber an organosilicon compound at a flow rate between about 50 andabout 300 sccm, and an aliphatic hydrocarbon comprising a carbon-carbondouble bond or a carbon-carbon triple bond, at a flow rate between about50 and about 500 sccm, such as between about 100 and about 500 sccm, andoptionally, helium at a flow rate between about 0 and about 1000 sccm.Preferably, helium is introduced into the chamber at a flow rate of lessthan about 400 sccm. The gas mixture may be reacted in a plasmaprocessing chamber at a pressure of between about 2 Torr and about 10Torr, such as between about 2 and about 5 Torr. The substratetemperature may be between about 200° C. and about 400° C., such asbetween about 300° C. and about 400° C. A RF power of between about 100watts and about 700 watts, such as between about 300 watts and about 700watts, or between about 100 watts and about 600 watts, may be applied ina plasma processing chamber for processing 300 mm substrates. A RF powerof between about 100 watts and about 700 watts, such as between about100 watts and about 600 watts, may be applied in a plasma processingchamber for processing 200 mm substrates. The RF power can be providedat a high frequency such as between about 13 and about 14 MHz, such as13.56 MHz. The gas mixture may be introduced into the chamber by a gasdistributor that may be positioned between about 300 mils and about 500mils from the substrate surface.

In another aspect, a silicon carbide glue layer may be deposited on asubstrate by reacting a gas mixture comprising an organosilicon compoundand a gas selected from the group of hydrogen and argon in a plasmaprovided in a plasma processing chamber. Preferably, the organosiliconcompound is trimethylsilane. In one embodiment, a silicon carbide gluelayer may be deposited by introducing into a plasma processing chamberan organosilicon compound at a flow rate between about 50 and about 350sccm and hydrogen at a flow rate between about 100 and about 500 sccm.The gas mixture may be reacted in a plasma processing chamber at apressure of between about 3 Torr and about 12 Torr. The substratetemperature may be between about 200° C. and about 400° C. A RF power ofbetween about 200 watts and about 700 watts, preferably between about300 watts and about 700 watts, may be applied in a plasma processingchamber for processing 300 mm substrates. A RF power of between about200 watts and about 700 watts may be applied in a plasma processingchamber for processing 200 mm substrates. The RF power can be providedat a high frequency such as between about 13 and about 14 MHz, such as13.56 MHz. In another embodiment, a silicon carbide glue layer may bedeposited by introducing into a plasma processing chamber anorganosilicon compound at a flow rate between about 50 and about 350sccm and argon at a flow rate between about 100 and about 500 sccm. Thegas mixture may be reacted in a plasma processing chamber at a pressureof between about 3 Torr and about 12 Torr. The substrate temperature maybe between about 200° C. and about 400° C. A RF power of between about200 watts and about 700 watts, preferably between about 300 watts andabout 700 watts, may be applied in a plasma processing chamber forprocessing 300 mm substrates. A RF power of between about 200 watts andabout 700 watts may be applied in a plasma processing chamber forprocessing 200 mm substrates. The RF power can be provided at a highfrequency such as between about 13 and about 14 MHz.

Barrier Bilayers with Silicon Carbide Glue Layers

In another aspect, a barrier bilayer may be deposited on a substrate byfirst depositing a silicon carbide glue layer by reacting a gas mixturecomprising an organosilicon compound, and an aliphatic hydrocarboncomprising a carbon-carbon double bond or a carbon-carbon triple bond,such as ethylene, and optionally, helium, in a plasma provided in plasmaprocessing chamber, and then depositing a barrier layer on thesubstrate. Preferably, the organosilicon compound is trimethylsilane. Inone example, the silicon carbide glue layer may be about 80 Å thick, andthe barrier layer may be about 420 Å thick, resulting in a 500 Å barrierbilayer. A silicon carbide glue layer may be deposited in one embodimentby introducing into a plasma processing chamber an organosiliconcompound at a flow rate between about 50 and about 300 sccm, analiphatic hydrocarbon comprising a carbon-carbon double bond or acarbon-carbon triple bond, such as ethylene, at a flow rate betweenabout 50 and about 500 sccm, such as between about 100 and about 500sccm, and optionally, helium at a flow rate between about 0 and about1000 sccm. Preferably, helium is introduced into the chamber at a flowrate of less than about 400 sccm. The gas mixture may be reacted in aplasma processing chamber at a pressure of between about 2 Torr andabout 10 Torr, such as between about 2 and about 5 Torr. The substratetemperature may be between about 200° C. and about 400° C., such asbetween about 300° C. and about 400° C. A RF power of between about 100watts and about 700 watts, such as between about 300 watts and about 700watts, or between about 100 watts and about 600 watts may be applied ina plasma processing chamber for processing 300 mm substrates. A RF powerof between about 200 watts and about 700 watts may be applied in aplasma processing chamber for processing 200 mm substrates. The RF powercan be provided at a high frequency such as between about 13 and about14 MHz, such as about 13.56 MHz. The gas mixture may be introduced intothe chamber by a gas distributor that may be positioned between about300 mils and out 500 mils from the substrate surface.

In another aspect, a barrier bilayer may be deposited on a substrate byfirst depositing a silicon carbide glue layer by reacting a gas mixturecomprising an organosilicon compound and a gas selected from the groupof hydrogen and argon in a plasma provided in a plasma processingchamber, and then depositing a barrier layer on the substrate.Preferably, the organosilicon compound is trimethylsilane. In oneexample, the silicon carbide glue layer may be about 80 Å thick, and thebarrier layer may be about 420 Å thick, resulting in a 500 Å barrierbilayer. In one embodiment, a silicon carbide glue layer may bedeposited by introducing into a plasma processing chamber anorganosilicon compound at a flow rate between about 50 and about 350sccm and hydrogen at a flow rate between about 100 and about 500 sccm.The gas mixture may be reacted in a plasma processing chamber at apressure of between about 3 Torr and about 12 Torr. The substratetemperature may be between about 200° C. and about 400° C. A RF power ofbetween about 200 watts and about 700 watts, preferably between about300 watts and about 700 watts, may be applied in a plasma processingchamber for processing 300 mm substrates. A RF power of between about200 watts and about 700 watts may be applied in a plasma processingchamber for processing 200 mm substrates. The RF power can be providedat a high frequency such as between about 13 and about 14 MHz, such asabout 13.56 MHz. In another embodiment, a silicon carbide glue layer maybe deposited by introducing into a plasma processing chamber anorganosilicon compound at a flow rate between about 50 and about 350sccm and argon at a flow rate between about 100 and about 500 sccm. Thegas mixture may be reacted in a plasma processing chamber at a pressureof between about watts 3 Torr and about 12 Torr. The substratetemperature may be between about 200° C. and about 400° C. A RF power ofbetween about 200 watts and about 700 watts, preferably between about300 watts and about 700 watts, may be applied in a plasma processingchamber for processing 300 mm substrates. A RF power of between about200 watts and about 700 watts may be applied in a plasma processingchamber for processing 200 mm substrates. The RF power can be providedat a high frequency such as between about 13 and about 14 MHz, such asabout 13.56 MHz.

While a preferred thickness of the silicon carbide glue layers describedherein in barrier bilayers is about 80 Å, other thickness of the siliconcarbide glue layers may be used. For example, a silicon carbide layer ofbetween about 50 Å and about 100 Å may be used. A desired thickness ofthe silicon carbide glue layer can be determined by exposing a substratecontaining the silicon carbide glue layer over an underlying metalfeature, such as copper, to a plasma containing oxygen. A change in thereflectivity of the metal indicates that the metal has been oxidized,and thus is not protected sufficiently by the glue layer. This minimumthickness of glue layer that results in substantially no change in themetal reflectivity can be selected as the desired thickness of thesilicon carbide glue layer.

In embodiments in which the silicon carbide glue layer is part of abarrier bilayer that also includes a barrier layer, the barrier layermay be an oxygen-doped silicon carbide layer that contains no nitrogenor is substantially nitrogen free. The barrier layer may be deposited onthe silicon carbide glue layer by reacting a gas mixture comprising anoxygen-containing compound and an organosilicon compound. The barrierlayer may be deposited by reacting a gas mixture comprising anoxygen-containing organosilicon compound with an oxygen-freeorganosilicon compound. Suitable oxygen-free organosilicon compoundsinclude methylsilane, dimethylsilane, trimethylsilane, ethylsilane,disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane,1,2-bis(methylsilano)ethane, 2,2-disilanopropane, and1,3,5-trisilano-2,4,6-trimethylene. Suitable oxygen-containingorganosilicon compounds include dimethyldimethoxysilane,1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane,hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane,bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane,1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane,2,4,6,8,10-pentamethylcyclopentasiloxane,1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, andhexamethylcyclotrisiloxane. The oxygen-containing compound may includecarbon dioxide, CO, or water. For example, a gas mixture comprisingtrimethylsilane, helium, and carbon dioxide may be reacted in a plasmain a plasma processing chamber. Precursors and processing conditions forthe deposition of an oxygen-doped silicon carbide layer are alsodescribed in commonly assigned U.S. patent application Ser. No.10/196,498, filed Jul. 15, 2002, and entitled “A Method of DepositingDielectric Materials in Damascene Applications,” which is incorporatedby reference herein. However, other methods may be used to deposit thebarrier layer.

In one embodiment, an oxygen-doped silicon carbide barrier layer may bedeposited by supplying an organosilicon compound, such as TMS, to aplasma processing chamber at a flow rate between about 50 sccm and about300 sccm, supplying an oxygen-containing gas, such as CO₂, at a flowrate between about 100 sccm and about 800 sccm, supplying an inert gas,such as helium, at a flow rate between about 200 sccm and about 800sccm, maintaining a substrate temperature between about 300° C. andabout 400° C., maintaining a chamber pressure between about 2 Torr andabout 5 Torr, a RF power of between about 200 watts and about 500 watts,and a spacing of the gas distributor of the chamber from the substrateof between about 300 mils and about 400 mils. The oxygen-containing gasgenerally has the formula C_(X)H_(Y)O_(Z), with X being from 0 to 2, Ybeing from 0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1and X+Y+Z is 3 or less. Thus, the oxygen-containing gas may includecarbon dioxide, CO, or water. The oxygen-containing gas is typically aninorganic material. The oxygen-containing gas described herein isconsidered a non-oxidizing gas compared to oxygen or ozone. Oxygen-dopedsilicon carbide barrier layers were deposited according to the processesdescribed herein, and the layers were analyzed. FTIR spectra (not shown)of the layers measured over two weeks were stable, suggesting that thecomposition of the layers is stable and that the layers do not absorb asignificant amount of moisture. It was also found that the dielectricconstant and the stress of the film did not change significantly oneweek after deposition. Secondary ion mass spectroscopy (SIMS) wasperformed to determine the amount of copper diffusion through thebarrier layers. The amount of copper that diffused through the filmsdecreased by 3 orders of magnitude over 200 Å, indicating that the filmsare effective copper barriers.

In another embodiment, an oxygen-doped silicon carbide barrier layer maybe deposited as described above, except that an oxygen-containingcompound having the general formula

is used instead of an oxygen-containing gas having the general formulaC_(X)H_(Y)O_(Z), with X being from 0 to 2, Y being from 0 to 2, and Zbeing from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less. Inone example, an oxygen-doped silicon carbide barrier layer is depositedfrom a gas mixture comprising diethylmethylsilane andtetramethyldisiloxane or dimethyldimethoxysilane. In any of theembodiments described herein in which an oxygen-doped silicon carbidebarrier layer is deposited using an oxygen-containing gas having thegeneral formula C_(X)H_(Y)O_(Z), with X being from 0 to 2, Y being from0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is3 or less, an oxygen-containing compound having the general formula

may be used instead of the oxygen-containing gas.

It was found that increasing the amount of oxygen-containing gas oroxygen-containing compound relative to the organosilicon compound in thedeposition of the oxygen-doped silicon carbide layer lowers thedielectric constant of the deposited films by increasing the number ofSi—O bonds in the deposited layers. However, too much oxygen doping ofthe barrier layers may decrease etch selectively between the barrierlayers and adjacent dielectric layers that may contain oxygen, resultingin an increased amount of copper diffusion into the barrier layers.

Table 1 shows a comparison of barrier layer properties of oxygen-dopedsilicon carbide layers deposited by the processes described herein andconventional oxygen-free silicon carbide layers. The oxygen-dopedbarrier layers typically have a lower dielectric constant and a lowercurrent leakage than the oxygen-free barrier layers. TABLE 1 FilmProperties Oxygen-doped SiC Oxygen-free SiC Refractive index (RI)1.75˜1.80 >2.00 Dielectric constant (k) 4.0˜4.2 >4.4 Leakage (A/cm² at 2MV/cm)   2.0˜4.0 E−9 >E−8 Breakdown (MV/cm at 1 mA) >5 >3.5 Stress(dyne/cm²) −1.7˜−2.0 E9 −3.0˜−4.5 E8 Hardness (Gpa) >8 >5 Elasticmodulus (Gpa) >50  >40 Oxygen concentration   5˜15% Not Determined

In another aspect, devices including embodiments of silicon carbide gluelayers described herein are provided. FIG. 2 shows a device 300comprising a dielectric layer 302 having a metal feature 304 formedtherein. The metal feature 304 extends to a surface 306 of thedielectric layer 302. A silicon carbide silicon carbide glue layer 310is formed on the surface of the dielectric layer 302. In one embodiment,the silicon carbide layer 310 is formed by reacting a gas mixturecomprising an organosilicon compound, an aliphatic hydrocarboncomprising a carbon-carbon double bond or a carbon-carbon triple bond,such as ethylene, and optionally, helium, in a plasma in a plasmaprocessing chamber and depositing a thin film on the surface 306 of thedielectric layer. In another embodiment, the silicon carbide layer 310is formed by reacting a gas mixture comprising an organosilicon compoundand a gas selected from the group of hydrogen and argon in a plasma in aplasma processing chamber and depositing a thin film on the surface 306of the dielectric layer. In either embodiment, preferably, theorganosilicon compound is trimethylsilane. The silicon carbide layer 310may serve as a barrier layer that separates the metal feature 304 in thedielectric layer 302 from an additional layer 312, such as a dielectriclayer, deposited on the silicon carbide layer 310 if an additionalbarrier layer is not deposited on the layer 310 before the dielectriclayer 312 is deposited. The dielectric layer 312 may be a low dielectricconstant material such as Black Diamond™ films, commercially availablefrom Applied Materials, Inc., of Santa Clara, Calif. and SILK® films,available from Dow Chemical Company. The dielectric layer 312 may alsocomprise other low dielectric constant materials including polymermaterials, such as parylene, or low k spin-on glass such as an un-dopedsilicon glass (USG) or fluorine-doped silicon glass (FSG).

Optionally, the device 300 may also include a barrier layer 320 on thesilicon carbide layer 310. The barrier layer 320 may be an oxygen-dopedsilicon carbide layer. The barrier layer 320 may be formed by reacting agas mixture comprising trimethylsilane, helium, and carbon dioxide in aplasma in a plasma processing chamber. Thus, the device comprises abarrier bilayer 330 that includes the silicon carbide layer 310 and thebarrier layer 320. The barrier bilayer 330 separates the metal feature304 in the dielectric layer 302 from the additional layer 312 depositedon the barrier layer 320.

We have found that silicon carbide glue layers deposited according tothe embodiments described herein have significantly and unexpectedlyimproved properties, such as leakage currents and breakdown voltages,compared to layers deposited by reacting a gas mixture oftrimethylsilane and helium. An example of typical resulting propertiesof silicon carbide glue layers deposited from different gas mixtures isshown below in Table 2. The leakage currents of layers depositedaccording to embodiments described herein, i.e., a trimethylsilane andhydrogen gas mixture, a trimethylsilane, ethylene, and helium gasmixture, and a trimethylsilane and ethylene gas mixture, are typicallylower than the leakage current of a layer deposited from a gas mixtureof helium and trimethylsilane. The leakage current of layers depositedaccording to embodiments described herein may be an order of magnitudelower than the leakage current of a layer deposited from a gas mixtureof trimethylsilane and helium. Leakage current typically increases withdegrading barrier layer properties. The breakdown voltages of layersdeposited according to embodiments described herein are typically higherthan the breakdown voltage of a layer deposited from a gas mixture oftrimethylsilane and helium. However, the uniformity, i.e., theuniformity of the layer surface measured by an optical test across thesurface, of the layers described herein is typically not as good as theuniformity of a layer deposited from a gas mixture of trimethylsilaneand helium. TABLE 2 trimethylsilane, trimethylsilane, trimethylsilane,ethylene, trimethylsilane, layer properties helium hydrogen heliumethylene dielectric  4.17  3.88  3.73  3.81 constant (@ 0.1 MHz) leakagecurrent 6.8 × 10⁻⁹ 3.1 × 10⁻⁹ 2.3 × 10⁻⁹ 2.0 × 10⁻⁹ @1 MV/cm in A/cm²leakage current 1.6 × 10⁻⁷ 6.1 × 10⁻⁸ 3.1 × 10⁻⁸ 4.6 × 10⁻⁹ @2 MV/cm inA/cm² breakdown 3.7 4.3 4.5 4.1 voltage in MV/cm uniformity (%) 1.5 5  2.5 2.7

It is believed that the layers deposited from a mixture oftrimethylsilane and helium have less desirable properties than thelayers deposited from a mixture of an organosilicon compound, such astrimethylsilane, and hydrogen or argon because helium may cause damageto deposited layers during the plasma deposition process. Damaged layersmay be more likely to have current leakage problems. It is believed thathydrogen and argon do not result in the damage to the layers that heliummay cause. For example, it is believed that hydrogen and argon do notcontribute as much as helium may to the formation the broken bonds inthe deposition layer that may lead to silicon-silicon bond formation inthe deposited layers. Silicon-silicon bonds are undesirable in a barrierlayer because of their semiconducting properties, which can contributeto current leakage.

It is believed that the layers deposited from a mixture of anorganosilicon compound, such as trimethylsilane, and helium have lessdesirable properties than the layers deposited from a mixture of anorganosilicon compound, such as trimethylsilane, an aliphatichydrocarbon comprising a carbon-carbon double bond or a carbon-carbontriple bond, such as ethylene, and optionally, helium, because it isexpected that the decomposition of an organosilicon compound during thedeposition process can lead to the formation of more silicon-silicon(Si—Si) bonds in a mixture of an organosilicon compound and helium thanin a mixture of an aliphatic hydrocarbon comprising a carbon-carbondouble bond or a carbon-carbon triple bond, such as ethylene, anorganosilicon compound, and optionally, helium. Silicon-silicon bondsare undesirable in a barrier layer because of their semiconductingproperties, which can contribute to current leakage. It is believed thatthe addition of the aliphatic hydrocarbon comprising a carbon-carbondouble bond or a carbon-carbon triple bond, to a mixture including anorganosilicon compound contributes to the formation of Si—C—Si bonds inthe deposited layer rather than Si—Si bonds.

In the embodiments described herein, the silicon carbide glue layer maybe deposited from a mixture including a precursor or precursors havingthe formulae SiH_(a)(CH₃)_(b)(C₂H₅)_(c)(C₆H₅)_(d), wherein a is 0 to 2,b is 0 to 4, c is 0 to 4, and d is 0 to 4,

Endo et al., U.S. Pat. No. 4,532,150, describes mixing ethylene withprecursors containing Si—Si bonds to form silicon carbide films. Itshould be noted that organosilicon compounds containing Si—Si bonds arenot described herein. It is believed that depositing a layer from a gasmixture comprising a precursor containing Si—Si bonds contributes to theformation of Si—Si bonds in the deposited layer, and significantlyincreases current leakage.

While the silicon carbide glue layers described herein have beendiscussed primarily as barrier layers or components of barrier bilayers,the silicon carbide glue layers described herein may also be used ashard masks. FIG. 3 shows an example of a device 350 incorporating asilicon carbide layer as a hard mask. An etch stop 332, such as siliconcarbide or nitrogen-doped silicon carbide is deposited on a dielectriclayer 312 that is equivalent to the dielectric layer 312 of FIG. 2.Another dielectric layer 334 is deposited on the etch stop 332. Asilicon carbide hard mask layer 336 is then deposited on the dielectriclayer 334. The silicon carbide hard mask layer 336 may serve as a hardmask by itself, or it may have another hard mask layer 338, such as asilicon oxide, deposited on it to form a hard mask bilayer 340. The hardmask bilayer 340 provides two layers of protection for the device duringsubsequent processing steps, such as chemical mechanical polishing (CMP)of the device and etching the device to form vias and trenches.Preferably, the hard mask layer 338 has sufficiently different etchingproperties such that the hard mask layer 338 and the silicon carbidehard mask layer 336 can be etched differently to provide different etchpatterns for vias and trenches.

EXAMPLES Example 1

A silicon carbide glue layer was deposited at a chamber pressure of 5Torr and temperature of 350° C. from gases which were flowed into aplasma processing chamber as follows: trimethylsilane, at 160 sccmethylene, at 200 sccm helium, at 200 sccmThe substrate was positioned 400 mil from the gas distributionshowerhead and 450 watts of high frequency power at 13.56 MHz wasapplied to the showerhead for plasma enhanced deposition of a siliconcarbide silicon carbide glue layer. The silicon carbide glue layer wasdeposited at a rate of about 886 Å/min, and had a dielectric constant ofabout 3.73, a uniformity of about 2.5%, a leakage current of about2.32×10⁻⁹ A/cm² at 1 MV/cm, a leakage current of about 3.06×10⁻⁸ A/cm²at 2 MV/cm, and a breakdown voltage of about 4.47 MV/cm.

Example 2

A silicon carbide glue layer was deposited at a chamber pressure of 3Torr and temperature of 350° C. from gases which were flowed into aplasma processing chamber as follows: trimethylsilane, at 150 sccmethylene, at 200 sccm.The substrate was positioned 400 mil from the gas distributionshowerhead and 600 watts of high frequency power at 13.56 MHz wasapplied to the showerhead for plasma enhanced deposition of a siliconcarbide silicon carbide glue layer. The silicon carbide glue layer wasdeposited at a rate of about 1255 Å/min, and had a dielectric constantof about 3.81, a uniformity of about 2.7%, a leakage current of about2.04×10⁻⁹ A/cm² at 1 MV/cm, a leakage current of about 4.64×10⁻⁸ A/cm²at 2 MV/cm, and a breakdown voltage of about 4.13 MV/cm.

Example 3

A silicon carbide glue layer was deposited at a chamber pressure of 9.5Torr and temperature of 350° C. from gases which were flowed into aplasma processing chamber as follows: trimethylsilane, at 160 sccmhydrogen, at 200 sccm.The substrate was positioned 400 mil from the gas distributionshowerhead and 450 watts of high frequency power at 13.56 MHz wasapplied to the showerhead for plasma enhanced deposition of a siliconcarbide silicon carbide glue layer. The silicon carbide glue layer wasdeposited at a rate of about 161 Å/min, and had a dielectric constant ofabout 3.88, a uniformity of about 5%, a leakage current of about3.1×10⁻⁹ A/cm² at 1 MV/cm, a leakage current of about 6.1×10⁻⁸ A/cm² at2 MV/cm, and a breakdown voltage of about 4.3 MV/cm.

Example 4

A silicon carbide glue layer was deposited at a chamber pressure of 9.5Torr and temperature of 350° C. from gases which were flowed into aplasma processing chamber as follows: trimethylsilane, at 160 sccmargon, at 200 sccm.The substrate was positioned 400 mil from the gas distributionshowerhead and 450 watts of high frequency power at 13.56 MHz wasapplied to the showerhead for plasma enhanced deposition of a siliconcarbide silicon carbide glue layer. The silicon carbide glue layer wasdeposited at a rate of about 713 Å/min, and a dielectric constant ofabout 4.0, a uniformity of about 1.9%, a leakage current of about2.8×10⁻⁹ A/cm² at 1 MV/cm, a leakage current of about 4.3×10⁻⁸ A/cm² at2 MV/cm, and a breakdown voltage of about 3.63 MV/cm.

Example 5

A barrier layer was deposited on one of the silicon carbide glue layersdeposited as in Examples 1-4. The barrier layer was deposited at achamber pressure of 3.5 torr and temperature of 350° C. from gases whichwere flowed into a plasma processing chamber as follows:trimethylsilane, at 100 sccm helium, at 400 sccm carbon dioxide, at 350sccm.The substrate was positioned 350 mil from the gas distributionshowerhead and 400 watts of high frequency power at 13.56 MHz wasapplied to the showerhead for plasma enhanced deposition of anoxygen-doped silicon carbide barrier layer. The barrier layer wasdeposited at a rate of about 920 Å/min, and a dielectric constant ofabout 3.88, a uniformity of about 1.1%, a leakage current of about4.2×10⁻¹⁰ A/cm² at 1 MV/cm, a leakage current of about 3.6×10⁻⁹ A/cm² at2 MV/cm, a breakdown voltage of about 5.24 MV/cm. The compressive stressof the barrier layer was about 1.82×10⁻⁹ dyne/cm².Barrier bilayers with sin or SiCN layers

In another aspect, a barrier bilayer may be deposited on a substrate byfirst depositing a SiN or SiCN layer on a substrate, and then depositingan oxygen-doped silicon carbide barrier layer on the substrate. Theoxygen-doped barrier layer may be deposited by the processes describedherein for depositing an oxygen-doped silicon carbide barrier that ispart of a barrier bilayer that also contains a silicon carbide gluelayer. The SiN or SiCN layer may be deposited using conventionaltechniques for SiN and SiCN deposition. Examples of processing gases andconditions that may be used to deposit SiCN layers are described inUntied States patent application Ser. No. 09/793,818, filed Feb. 23,2001, which is incorporated by reference herein.

A device including the barrier bilayer is also provided. While FIG. 2was described above with respect to a device including a barrier bilayerhaving a silicon carbide layer 310, the layer 310 may alternativelyrepresent a SiN or SiCN layer.

One advantage of the methods and devices described herein that includebarrier bilayers is that a photoresist may be deposited directly on theoxygen-doped silicon carbide layer of the barrier bilayer withoutsubjecting the photoresist to nitrogen poisoning.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A method for processing a substrate, comprising: providing substratehaving conductive features formed in a dielectric material to aprocessing chamber; depositing a first barrier layer comprising silicon,carbon, and nitrogen on the substrate; depositing a second barrier layeron the first barrier layer, wherein the second barrier layer is anitrogen free dielectric layer comprising silicon and carbon anddeposited by reacting a processing gas comprising a carbon and oxygencontaining compound and an oxygen-free organosilicon compound.
 2. Themethod of claim 1, further comprising depositing a dielectric layeradjacent the second barrier layer, wherein the dielectric layercomprises silicon, oxygen, and carbon and has a dielectric constant ofabout 3 or less.
 3. The method of claim 1, wherein the compoundcomprising oxygen and carbon is selected from the group of carbondioxide, carbon monoxide, an oxygen-containing organosilicon compound,and combinations thereof.
 4. The method of claim 1, wherein theoxygen-free organosilicon compound comprises organosilicon compoundhaving the formula SiH_(a)(CH₃)_(b)(C₆H₅)_(c), wherein a is 0 to 3, b is0 to 3, and c is 1 to
 4. 5. The method of claim 4, wherein theoxygen-free organosilicon compound comprises trimethylsilane,tetramethylsilane, or both.
 6. The method of claim 1, wherein theprocessing gas further comprises an inert gas selected from the group ofhelium, argon, and combinations thereof.
 7. The method of claim 6,wherein the processing gas comprises carbon dioxide, helium, andtrimethylsilane.
 8. The method of claim 1, wherein the first barrierlayer and the second barrier layer are deposited in situ in the sameprocessing chamber or same processing system without breaking vacuum. 9.The method of claim 1, wherein the depositing a second barrier layer onthe first barrier layer comprises supplying trimethylsilane to aprocessing chamber at a flow rate between about 50 sccm and about 300sccm, supplying carbon dioxide at a flow rate between about 100 sccm andabout 800 sccm, supplying helium at a flow rate between about 200 sccmand about 800 sccm, maintaining a substrate temperature between about300° C. and about 400° C., maintaining a chamber pressure between about2 Torr and about 5 Torr, and applying a RF power of between about 200watts and about 500 watts.
 10. A method for processing a substrate,comprising: depositing an phenyl containing silicon carbide layer on thesubstrate by reacting a first gas mixture comprising hydrogen, an inertgas, and dimethylphenylsilane in a plasma; and depositing anoxygen-doped silicon carbide layer on the phenyl containing siliconcarbide layer by reacting a second gas mixture comprisingtrimethylsilane and carbon dioxide.
 11. The method of claim 10, whereinthe inert gas comprises helium, argon, or combinations thereof.
 12. Themethod of claim 10, further comprising depositing a low dielectricconstant material on the oxygen-doped silicon carbide layer.
 13. Themethod of claim 10, wherein the second gas mixture further comprises aninert gas selected from the group of helium, argon, and combinationsthereof.
 14. The method of claim 10, wherein the depositing anoxygen-doped silicon carbide layer comprises supplying trimethylsilaneto a processing chamber at a flow rate between about 50 sccm and about300 sccm, supplying carbon dioxide at a flow rate between about 100 sccmand about 800 sccm, supplying helium at a flow rate between about 200sccm and about 800 sccm, maintaining a substrate temperature betweenabout 300° C. and about 400° C., maintaining a chamber pressure betweenabout 2 Torr and about 5 Torr, and applying a RF power of between about200 watts and about 500 watts.
 15. The method of claim 10, wherein thedepositing an phenyl containing silicon carbide layer comprisessupplying dimethylphenylsilane to a processing chamber, supplyinghydrogen at a flow rate between about 100 sccm and about 500 sccm to theprocessing chamber, supplying helium to a processing chamber,maintaining a substrate temperature between about 200° C. and about 400°C., maintaining a chamber pressure between about 3 Torr and about 12Torr, and applying a RF power of between about 200 watts and about 700watts.
 16. The method of claim 10, further comprising pre-treating asubstrate with a hydrogen plasma.